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MG800J2YS50A
TOSHIBA IGBT Module Silicon N Channel IGBT
MG800J2YS50A
High power switching applications Motor control applications
* * * The electrodes are isolated from case. Enhancement-mode Thermal output terminal (TH) Unit: mm
Equivalent Circuit
TH1 TH2 1
G1 Fo1 E1 E1/C2
JEDEC
G2 Fo2 E2 E2
2-126A1A
JEITA TOSHIBA Weight: 680 g (typ.)
Maximum Ratings (Ta = 25C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Forward current Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range Isolation voltage Screw torque Terminal: M8 Mounting: M5 DC DC Symbol VCES VGES IC IF PC Tj Tstg VIsol 3/4 3/4 Rating 600 20 800 800 2900 150 -40~125 2500 (AC 1 min) 10 3 Unit V V A A W C C V Nm Nm
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MG800J2YS50A
Electrical Characteristics (Ta = 25C)
Characteristics Gate Leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Gate-emitter voltage Gate resistance Symbol IGES ICES VGE (off) VCE (sat) Cies VGE RG td (on) tr Switching time ton td (off) tf toff Forward voltage Reverse recovery time Thermal resistance RTC Operating current VF trr Rth (j-c) Irtc IF = 800A, VGE = 0V Tj = 25C Tj = 125C Inductive load VCC = 300 V IC = 800 A VGE = 15 V RG = 4.7 W Test Condition VGE = 20 V, VCE = 0 V VCE = 600 V, VGE = 0 V IC = 800 mA, VCE = 5 V IC = 800 A, VGE = 15 V Tj = 25C Tj = 125C Min 3/4 3/4 3/4 3/4 3/4 3/4 13 4.7 3/4 3/4 3/4 3/4 (Note) 3/4 3/4 3/4 3/4 3/4 3/4 3/4 1600 Typ. 3/4 3/4 6.5 2.4 2.6 93000 15 3/4 0.3 0.25 0.55 0.85 0.15 1.05 2.3 2.1 3/4 3/4 3/4 3/4 Max 10 1 3/4 3.0 3.3 3/4 17 15 3/4 3/4 3/4 3/4 0.30 3/4 3.0 3/4 0.5 0.043 0.056 3/4 V ms C/W A ms Unit mA mA V V pF V W
VCE = 10 V, VGE = 0 V, f = 1 MHz 3/4 3/4
IF = 800 A, VGE = -10 V di/dt = 2000 A/ms Transistor stage Diode stage Tj = 25C
Thermistor
Characteristics Zero power resistance B value Isolation voltage Symbol R25 R25/85 Tc = 25C Tc = 25C/Tc = 85C Tc = 25C Test Condition Min 3/4 3/4 2500 Typ. 100 4390 3/4 Max 3/4 3/4 3/4 Unit kW K Vrms
Note: Switching time measurement circuit and input/output waveforms
VGE RG -VGE IC RG L VCC IC 90% VCE 0 td (off) toff tf 10% 10% td (on) tr ton 90% 90% IF 0 10% trr
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MG800J2YS50A
IC - VCE
1800 1600 Common emitter Tj = 25C 20 15 12 1800 1600 Common emitter Tj = 125C
IC - VCE
20 15 12
(A)
IC
IC
1200 1000 800 600 400 200 0 0 9 VGE = 8 V 1 2 3 4 5 10
(A)
1400
1400 1200 1000 800 600 400 200 0 0 9 10
Collector current
Collector current
VGE = 8 V
1
2
3
4
5
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
VCE - VGE
12 12
VCE - VGE
(V)
Common emitter 10 Tj = 125C
(V)
Common emitter 10 Tj = 25C
VCE
8
VCE Collector-emitter voltage
8
Collector-emitter voltage
6
6
4 800 2 IC = 400 A 0 0 4 8 12
1600
4
1600 800
2 IC = 400 A 0 0 4 8 12 16 20
16
20
Gate-emitter voltage VGE
(V)
Gate-emitter voltage VGE
(V)
IC - VGE
1800 1600 Common emitter VCE = 5 V
(A) IC Collector current
1400 1200 1000 800 600 400 200 0 0
Tj = 125C
25
2
4
6
8
10
12
14
16
Gate-emitter voltage VGE
(V)
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MG800J2YS50A
IF - VF
900 800 400
VCE, VGE - QG
16 14 VCE = 0 300 250 200 150 100 50 0 0 Common emitter RL = 0.375 W Tj = 25C 300 100 12 10 200 8 6 4 2 0 4000
(V)
Collector-emitter voltage VCE
(A)
700 600 500 400 300 200 100 0 0 Common cathode VGE = 0 V 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 125 Tj = 25C
1000
2000
3000
Forward voltage
VF
(V)
Charge
QG
(nC)
Switching time - RG
10000 Common emitter VCC = 300 V 5000 VGE = 15 V IC = 800 A 3000 toff 1000 500 300 tf 100 2 4 6 8 10 12 14 16 100 2 4 tr ton td (off) td (on) 10000
Switching time - RG
Common emitter VCC = 300 V 5000 VGE = 15 V IC = 800 A 3000
(ms)
(mJ)
Tj = 25C Tj = 125C
Tj = 25C Tj = 125C Eon
Switching time loss
Switching time
1000 500 300
Eoff
6
8
10
12
14
16
Gate resistance RG
(9)
Gate resistance RG
(9)
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Gate-emitter voltage VGE
Forward current IF
(V)
350
MG800J2YS50A
Switching time - IC
10000 100
Switching loss - IC
Eoff 50
(mJ)
(ms)
toff 1000 td (on) ton td (on) tr 100 Common emitter VCC = 300 V VGE = 15 V RG = 4.7 W 100 200 300 400 500 600 tf
30
Eon
Switching time loss
Switching time
10 5 3 Common emitter VCC = 300 V VGE = 15 V RG = 4.7 W 100 200 300 400 500 600
10 0
Tj = 25C Tj = 125C 700 800 900
Tj = 25C Tj = 125C 700 800 900
1 0
Collector current
IC
(A)
Collector current
IC
(A)
trr, Irr - IF
1000 1000
Edsw - IF
Common cathode
Irr (A) (ns)
(mJ)
trr
di/dt = 2000 A/ms VGE = -10 V VCC = 300 V 100 Tj = 25C Tj = 125C
Peak reverse recovery current Reverse recovery time trr
100
Irr
10 Common cathode di/dt = 2000 A/ms VGE = 15 V VCC = 300 V 1 0 200 400 600 Tj = 25C Tj = 125C 800
Reverse recovery loss Edsw
10
1 0
200
400
600
800
Forward current
IF
(A)
Forward current
IF
(A)
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MG800J2YS50A
C - VCE
1000000 1 Tc = 25C
Rth (t) - tw
100000
(pF)
Ciss
0.1
Diode stage Transistor stage
Capacitance C
10000
0.01
Coss 1000 Common emitter VGE = 0 f = 1 MHz Tj = 25C 1 10 100 Crss 0.001 0.001 0.01 0.1 1 10
Pulse width
tw
(s)
100 0
1000
Collector-emitter voltage
VCE
(V)
Reverse bias SOA
10000 10000
Scsoa
(A)
1000
(A) Collector current IC
1000
Collector current
IC
100
100
10 Tj < 125C = VGE = 15 V 1 0 RG = 4.7 W 200 400 600 800
10
1 0
Common emitter VCC = 300 V Tj < 125C = tw = 10 ms 200 400 600 800
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
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MG800J2YS50A
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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